| abstract |
An object of the present invention is to provide an apparatus for producing a single crystal that can be taken out without generating cracks when taking out a grown single crystal such as aluminum nitride. The present invention relates to a crystal growth container, a raw material container disposed on the inner bottom of the crystal growth container, a lid disposed above the raw material container, and the lid facing the raw material container. A seed substrate disposed on the surface to be heated, and heating means disposed on the outer periphery of the crystal growth vessel, heating the raw material stored in the raw material vessel to generate sublimation gas, A single crystal manufacturing apparatus for growing a single crystal by condensing on the seed substrate, wherein a sintered body is disposed between the lid and the seed substrate. [Selection] Figure 1 |