http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013155111-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3782c4ada372750b3a67d13aada1cc30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca0a8ffb1dcc1ae24030d6334e9242e8 |
| publicationDate | 2013-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013155111-A |
| titleOfInvention | SiC substrate, carbon supply feed substrate, and SiC substrate with carbon nanomaterial |
| abstract | A single crystal SiC substrate planarized at a molecular level is provided. A manufacturing method includes a groove forming process, a mask process, and a liquid phase epitaxial growth process. In the groove forming step, the SiC polycrystalline substrate is subjected to groove processing so as to divide the surface of the SiC polycrystalline substrate into a plurality of regions of a semiconductor device 1 chip size. In the mask process, each of the plurality of regions formed in the groove forming step is masked by a mask member, and a minute opening is formed in a portion corresponding to the central portion of the mask region. In the liquid phase epitaxial growth step, a heterocrystalline polymorphic 4H—SiC single crystal is epitaxially grown in the vertical and horizontal directions by the metastable solvent epitaxy method in the opening of the SiC polycrystalline substrate that has been grooved to serve as a seed substrate. [Selection] Figure 24 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018526230-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116428902-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116428902-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11085130-B2 |
| priorityDate | 2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.