http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013149759-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2012-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b06fb952994e17879effde5390fb2aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70a4f687a45bc0eafb60dff46db90025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80be9c5058065961513b701983f9d5dc |
| publicationDate | 2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013149759-A |
| titleOfInvention | Nonvolatile memory cell, nonvolatile memory device including the same, and method of selecting transition metal oxide |
| abstract | [PROBLEMS] To establish an operation mechanism as the main theory of ReRAM based on quantum mechanics, and to find a new and accurate design principle, so that rewriting speed is faster than expected and high-capacity data is highly reliable. ReRAM that can be handled is provided at a high yield. In a nonvolatile memory cell according to the present invention, by applying a voltage between the first electrode and the second electrode, around the oxygen vacancy 2 arranged in an HfO 2 layer or a CoO layer, The CoO layer or the HfO 2 layer is arranged so that a conduction path 3 for conducting electrons is formed from the first electrode toward the second electrode. [Selection] Figure 16 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113488589-A |
| priorityDate | 2012-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.