http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013148892-A

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filingDate 2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_670728824132ce71b207aa72751eca6b
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publicationDate 2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013148892-A
titleOfInvention Large phase shift mask and manufacturing method of large phase shift mask
abstract The present invention provides a translucent phase shift mask suitable for forming a fine pattern in a large photomask used for manufacturing a liquid crystal panel or an EL panel, and a method for manufacturing the same. Furthermore, the structure which suppresses generation | occurrence | production of the side peak which arises when a pattern is exposed using a translucent phase shift mask is provided. In a pattern in which transmission regions are adjacently disposed on both sides of a semitransparent phase shift region formed on a transparent substrate, the light transmittance of the semitransparent phase shift region is in the range of 4% to 30%. The width is in the range of 1 μm to 5 μm, thereby improving the contrast of the exposure intensity distribution and suppressing the occurrence of side peaks. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170117988-A
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