http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013145901-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-552 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_228b61f6c53211eb975f9fd8a3e73d1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7e14b5a1e67d5c4e91165b3c43668f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0699e2deea874d308e173f14a8c046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_317d31edfcd6de14ef1b3bfcf3d6452b |
| publicationDate | 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013145901-A |
| titleOfInvention | Semiconductor integrated circuit device |
| abstract | A semiconductor integrated circuit device is provided. A semiconductor substrate, a first conductive film pattern formed on the semiconductor substrate, an insulating film formed on the first conductive film pattern, and a second conductive film formed on the insulating film A first ultraviolet blocking film formed on the entire surface of the pattern, the second conductive film pattern and the insulating film and blocking ultraviolet rays radiated to the semiconductor substrate; and an intermetallic insulating film formed on the first ultraviolet blocking film And a third conductive film pattern formed on the intermetal insulating film, and a second ultraviolet light blocking film formed on the entire surface of the third conductive film pattern and the intermetallic insulating film and blocking ultraviolet light radiated to the semiconductor substrate. A membrane. Accordingly, it is possible to block ultraviolet rays from being radiated to the semiconductor substrate and block external ions and moisture from penetrating into the semiconductor substrate, thereby improving the operating characteristics of the semiconductor integrated circuit device. [Selection] Figure 2 |
| priorityDate | 2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.