| abstract |
Antimony and germanium complexes, methods for depositing metal films on substrates using compositions containing the complexes, and films and microelectronic device products produced using the precursors, and further correspondence A manufacturing method is provided. Contacting a substrate comprising a microelectronic device substrate to a germanium amidinate precursor vapor comprising forming a phase change memory device cell on the microelectronic device substrate on the substrate. How to deposit. [Selection figure] None |