| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3869a84ba850331e734f621226455c60 |
| publicationDate |
2013-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013143528-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
An electrode of a metal material that is difficult to process can be stably formed. According to this embodiment, a method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device, a first layer 15 containing Si is formed on a semiconductor substrate 10. Impurity regions 21 and non-impurity regions 22 are formed in the first layer by selectively diffusing impurities in the first layer. A second layer 23 containing a metal material is formed on the first layer. By annealing the second layer, the metal material is diffused into the non-impurity region. [Selection] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015176895-A |
| priorityDate |
2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |