| abstract |
An object of the present invention is to provide a phosphor having a higher emission intensity than a conventional phosphor and a high-luminance light-emitting device using the phosphor. The present invention relates to a nitride or oxynitride phosphor having a Cu content of 15 ppm or less. The nitride or oxynitride phosphor is represented by the general formula: Si 6-z Al z O z N 8-z (0 <z ≦ 4.2), and β-sialon phosphor containing Eu as the emission center Α sialon phosphor represented by the general formula: (MI) x (Eu) y (Si, Al) 12 (O, N) 16 , general formula: (MII) x (Si, Al) 2 (N, O) A phosphor represented by 3 ± y, in which a part of the MII element is substituted with an Eu element, and the main crystal phase has the same crystal structure as CaAlSiN 3 is included. [Selection figure] None |