| abstract |
A base compound comprising a high molecular compound containing a repeating unit having an aromatic group and having a repeating unit having an acid generator group of a sulfonium salt and which can be dissolved in an alkaline developer by the action of an acid. Applying a first positive resist material to the substrate to form a first resist film, and a solvent containing an ester group having 6 to 8 carbon atoms that does not dissolve the first resist film thereon Applying a second positive resist material containing a polymer compound that can be dissolved in an alkaline developer by the action of an acid to form a second resist film, and exposing the first and second Forming a resist pattern by simultaneously developing the resist film. [Effect] By combining the resist film of the second layer with the resist film of the first layer, the substrate is etched by using the resist pattern after development as a mask, or ions are implanted, as compared with the case of the resist film of the second layer alone. The resistance when dripping can be increased. [Selection figure] None |