http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013138478-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-32 |
| filingDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00493c8d5b956f1a1dbffaf60e57a6c7 |
| publicationDate | 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013138478-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device capable of reducing the influence of current leaking from a reset transistor toward a photoelectric conversion element and a driving method thereof. In a semiconductor device having a reset transistor, a photoelectric conversion element, a reset-side power supply line, and a diode-side power supply line, a gate terminal of the reset transistor is connected to a reset signal line, and one terminal of the photoelectric conversion element Is electrically connected to the diode-side power supply line, and the other terminal is connected to the reset-side power supply line via the reset transistor. When the reset transistor is in a non-conductive state, the reset-side power supply The potential of the line is brought close to the potential of the diode side power supply line. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380203-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380203-A |
| priorityDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.