| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-18 |
| filingDate |
2013-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b87e568431f611b53cda92289764267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5641923b816b1ed9d8c8b82f94440392 |
| publicationDate |
2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013136600-A |
| titleOfInvention |
Copper precursors for thin film deposition |
| abstract |
Non-fluorinated copper exhibiting at least one of thermal stability, chemical reactivity, and volatility to increase the growth rate of metallic copper using ALD or CVD. A precursor and a method for producing the same are provided. A copper film and copper on a substrate using a non-fluorinated copper precursor such as Cu (MeC (O) CHC (NCH2CHMeOSiMe2C2H3) Me) and selected from atomic layer deposition or chemical vapor deposition. Alloys can be deposited. [Selection] Figure 3 |
| priorityDate |
2007-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |