http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013135003-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148ebfc8bb31b96bd1e52323d59ecf7c |
| publicationDate | 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013135003-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | A semiconductor device including a small transistor with a small channel length is provided. A gate insulating layer is formed over a gate electrode layer, an oxide semiconductor layer is formed over the gate insulating layer, a conductive film is formed over the oxide semiconductor layer, and the conductive film is exposed to an electron beam. The first conductive layer and the second conductive layer are formed by selective etching with a positive resist, and a third conductive layer partially in contact with the first conductive layer and the second conductive layer are formed. A fourth conductive layer that is partially in contact with the first conductive layer, and the first conductive layer and the second conductive layer have a smaller interval than the third conductive layer and the fourth conductive layer. The third conductive layer is a source electrode, and the second conductive layer and the fourth conductive layer are drain electrodes. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103271-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015109429-A |
| priorityDate | 2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.