http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013128136-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 |
| publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013128136-A |
| titleOfInvention | Semiconductor device |
| abstract | The present invention aims to simplify the number of steps in the case of forming a multilayer integrated circuit in which a single crystal semiconductor layer has a multilayer structure over a supporting substrate. We will also improve the yield. The semiconductor junction interface region of the semiconductor element in the substrate surface is arranged so that it can be heated by direct laser irradiation from the support substrate side, that is, from the surface where the element of the substrate is not formed. After the first semiconductor element layer and the second semiconductor element layer are formed, the semiconductor of the first semiconductor element layer and the second semiconductor element layer is irradiated by irradiating laser from the support substrate side. Simultaneous activation of the bonding interface region is performed. The layer between the support substrate and the semiconductor element layer is light transmissive and has a structure that does not attenuate the laser. [Selection] Figure 4 |
| priorityDate | 2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.