Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0203 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate |
2011-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1202a402e7e9640a36e6a8b7c44f366a |
publicationDate |
2013-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2013120825-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
An object of the present invention is to prevent an increase in resistance of a pad. A first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and the second metal on the second conductive film. A pad having an oxide film and a capacitor having a lower electrode provided on the pad, wherein the second metal oxide film has a lower electrical resistivity than the first metal oxide film; A semiconductor device. [Selection] Figure 2 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020066819-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7149794-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020053612-A |
priorityDate |
2011-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |