| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
| filingDate |
2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66db4cbbb45dfc6e0301ccc21b688fd5 |
| publicationDate |
2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013118264-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device having a contact structure with excellent bonding strength and low resistance in connection of terminal portions of through electrodes using solder bonding and a method for manufacturing the same are provided. A layer containing gold is not formed on the surface of a terminal to be joined to a solder layer, but instead a hydrogen plasma treatment is performed, so that a film that is difficult to be re-oxidized is removed together with the removal of the oxide film. Specifically, a hydrogen plasma treatment is performed on the Ni layer 10 on the first surface of the through electrode structure 21 exposed on one main surface of the substrate, and the step of forming the through electrode structure 21 penetrating in the thickness direction of the substrate. And a step of forming a solder film 20 on the second surface of the through electrode structure 21 exposed on the other main surface of the substrate. [Selection] Figure 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710679-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020168456-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3903346-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018149883-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3364454-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I746801-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721609-B2 |
| priorityDate |
2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |