http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013115198-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B29C59-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2011-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a8d0a85df08ad8a66fc2060e12484e |
| publicationDate | 2013-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013115198-A |
| titleOfInvention | Pattern formation method |
| abstract | A step pattern of an applied reversal material is reduced, and a desired pattern is formed by a reversal mask process. According to this embodiment, a pattern forming method includes a step of forming a first pattern in a first region on a film to be processed, and a photosensitivity on the film to be processed so as to cover the first pattern. Forming a reversal material film having a compound; exposing and developing the reversal material film; and processing the reversal material film into a second pattern in a second region different from the first region on the film to be processed And after exposing and developing the reversal material film, etching back the reversal material film so that an upper surface of the first pattern is exposed, and processing the reversal material film into a third pattern in the first region. And a step of etching the film to be processed using the second pattern and the third pattern as a mask. [Selection] Figure 1 |
| priorityDate | 2011-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.