| abstract |
A method of manufacturing a semiconductor device capable of forming high-quality graphene on an insulating film is provided. A step of forming a catalytic metal film on a first substrate, a step of forming graphene using the catalytic metal film as a catalyst, a step of forming a first insulating film on the graphene, and a first insulation The step of forming the first metal film on the film, the step of forming the second metal film on the second substrate, and the surface of the first metal film and the surface of the second metal film are opposed to each other. A step of bonding the first metal film and the second metal film, and a step of removing the first substrate. [Selection] Figure 1 |