http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013107819-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
filingDate 2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d96d7202afeeb9db6a6cd462b35f0153
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publicationDate 2013-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013107819-A
titleOfInvention Method for producing nitride crystal
abstract The present invention provides a method capable of reducing the influence of warpage and strain of a seed crystal on a crystal grown on the seed crystal and producing a large-sized, low dislocation, low strain nitride crystal. This is the issue. The present invention relates to a method for manufacturing a nitride crystal by obtaining a nitride crystal by growing a grown crystal in the a-axis direction on a seed crystal, without substantially causing an A-plane as a growth plane. The present invention relates to a method for producing a nitride crystal, wherein the grown crystal is grown in the a-axis direction of the seed crystal. [Selection figure] None
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priorityDate 2011-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 47.