abstract |
The present invention provides a method capable of reducing the influence of warpage and strain of a seed crystal on a crystal grown on the seed crystal and producing a large-sized, low dislocation, low strain nitride crystal. This is the issue. The present invention relates to a method for manufacturing a nitride crystal by obtaining a nitride crystal by growing a grown crystal in the a-axis direction on a seed crystal, without substantially causing an A-plane as a growth plane. The present invention relates to a method for producing a nitride crystal, wherein the grown crystal is grown in the a-axis direction of the seed crystal. [Selection figure] None |