http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013105924-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e25ae4be78c14746d044bee3abab1d8a |
| publicationDate | 2013-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013105924-A |
| titleOfInvention | Manufacturing method of silicon epitaxial wafer |
| abstract | An object of the present invention is to provide a method capable of manufacturing a high-quality silicon epitaxial wafer by suppressing backside humor and pin halo during epitaxial growth. A silicon epitaxial wafer is manufactured by placing a silicon single crystal substrate on a wafer placement surface of a susceptor disposed in a chamber and epitaxially growing the silicon single crystal substrate on the silicon single crystal substrate. Before placing the silicon single crystal substrate, a polysilicon film is formed on the wafer placement surface of the susceptor in a time period exceeding 50 seconds and 300 seconds or less while flowing a silicon source gas into the chamber. A method for producing a silicon epitaxial wafer, which is coated and then epitaxially grown by placing the silicon single crystal substrate on the wafer placement surface of the susceptor. [Selection] Figure 1 |
| priorityDate | 2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.