http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013104768-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd0c923c602559876c9c14552987f9d8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e451353f33838b9728512a4864f8d845 |
| publicationDate | 2013-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013104768-A |
| titleOfInvention | Metal oxide semiconductor gas sensor and manufacturing method thereof |
| abstract | 【Constitution】 Crystal grains of n-type metal oxide semiconductors having greatly different sizes, donor densities, work functions, etc. are brought into contact with each other, or crystal grains of the n-type metal oxide semiconductor and metal grains are brought into contact with each other, and the contact interface is between the electrodes. The filling structure is controlled so as to effectively contribute to the conduction of the metal. Contact interfacial contact potential [delta] p is generated in which due to a change in the associated electron mobility, the resistance change of the sensor to the gas concentration change is promoted. 【effect】 A highly sensitive metal oxide semiconductor gas sensor can be obtained. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114887493-A |
| priorityDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.