http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013104093-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-503 |
filingDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_819429c4bebf533ce577679ae08e0c93 |
publicationDate | 2013-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2013104093-A |
titleOfInvention | Plasma CVD equipment |
abstract | In a plasma CVD apparatus for forming an amorphous carbon film on a substrate, adhesion of a substance containing carbon to a positive electrode is suppressed. A plasma CVD apparatus 100 supplies a reaction chamber 10, a positive electrode 20 and a negative electrode 30 disposed in the reaction chamber 10, and a first gas containing carbon between the positive electrode 20 and the negative electrode 30. A second gas that does not contain carbon is supplied between the positive electrode 20 and the negative electrode 30 during the supply of the first gas supply unit (first gas supply pipe 40) and the first gas. A gas supply unit (second gas supply pipe 42, gas flow path 22, and metal porous body 24). The second gas supply unit is provided to supply the second gas in a direction from the positive electrode 20 toward the negative electrode 30. [Selection] Figure 1 |
priorityDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.