http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013100220-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
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filingDate 2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60c8b54b97792a689b05ec084dd9ca4d
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publicationDate 2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013100220-A
titleOfInvention Periodic table group 13 metal nitride semiconductor crystal manufacturing method and periodic table group 13 metal nitride semiconductor crystal manufactured by the manufacturing method
abstract In a periodic table group 13 metal nitride semiconductor crystal obtained by epitaxial growth on a base substrate having a nonpolar plane and / or a semipolar plane as a main surface, the extinction coefficient is small, and it is suitable for use in a device. It is another object of the present invention to provide a high-quality semiconductor crystal in which the dopant concentration in the crystal can be controlled, and a manufacturing method capable of manufacturing such a semiconductor crystal. [Solution] High-quality Group 13 metal of periodic table suitable for devices with precise control of dopant concentration by suppressing oxygen doping due to impurities and increasing Si concentration over O concentration, and with a smaller extinction coefficient. A nitride semiconductor crystal can be provided. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018024578-A
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