| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J11-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J163-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2011-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eba7d9f6974526c62bbf50a00e6eebab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_644d8de44a4886fe996c13bc64e4130a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501650f512d4bcd14c0cd8ff2339f361 |
| publicationDate |
2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013098403-A |
| titleOfInvention |
Manufacturing method of semiconductor device, semiconductor device, adhesive film, and bonding method of adhesive film |
| abstract |
A method of manufacturing a semiconductor device capable of suppressing voids at the time of bonding an adhesive film and a semiconductor wafer and realizing high bonding reliability is provided. A step of making an adhesive layer of an adhesive film and a semiconductor wafer face each other with a clearance of 1 cm or less, and an adhesive layer of the adhesive film and the semiconductor wafer under a heating vacuum of 50 to 100 ° C. and 10,000 Pa or less. A step of bonding at a pressure of 0.1 to 1 MPa, a step of obtaining a semiconductor wafer with an adhesive layer, a step of separating the semiconductor wafer with an adhesive layer into semiconductor chips with an adhesive layer, A step of mounting a semiconductor chip with an adhesive layer, and the adhesive layer of the adhesive film has a tack value measured by a probe tack method on the surface bonded to the semiconductor wafer of 100 gf at the bonding temperature. Method of manufacturing a semiconductor device that is / 5 mmφ or more. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015172176-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016002079-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106463370-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018148030-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019167542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529665-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622311-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016105456-A |
| priorityDate |
2011-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |