| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2623 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-07314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-06 |
| filingDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_749169ef30f174babdd14541f239744a |
| publicationDate |
2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013096837-A |
| titleOfInvention |
Semiconductor test jig and withstand voltage measurement method using the same |
| abstract |
An object of the present invention is to provide a semiconductor test jig capable of measuring the breakdown voltage of a semiconductor chip at a low cost without generating atmospheric discharge, and a breakdown voltage measurement method using the same. A semiconductor test jig according to the present invention includes a susceptor 1 in which a probe pin 3 and an insulator 2 provided so as to surround the probe pin 3 in plan view are disposed, and a probe pin 3 of the susceptor 1. And a lower electrode stage 7 which is disposed opposite to the surface on which the insulator 2 is disposed and on which the semiconductor chip 4 can be placed on the surface on the susceptor 1 side. When the semiconductor chip 4 is placed and the susceptor 1 and the lower electrode stage 7 move in the approaching direction, the probe pin 3 comes into contact with the surface electrode 5 formed on the semiconductor chip 4 and the insulator 2 is in contact with the semiconductor chip. 4 and the lower electrode stage 7 are in contact with each other. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016061751-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10539607-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016095216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104297650-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018054401-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9684015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018508768-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016008826-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9753082-B2 |
| priorityDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |