http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013093586-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39 |
| filingDate | 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f7179246960fbe38316c1aaa3fa2b18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e320000d396c6cc9c81e76996a6c7b23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3510a1e74fc44d893dd97432727cd364 |
| publicationDate | 2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013093586-A |
| titleOfInvention | Ferroelectric material layer manufacturing method, thin film transistor, and piezoelectric ink jet head |
| abstract | A method of manufacturing a ferroelectric material layer capable of further improving the electrical characteristics of the ferroelectric material layer is provided. One method of manufacturing a ferroelectric material layer according to the present invention is to form a ferroelectric material precursor layer by forming a precursor layer of a ferroelectric material by applying a sol-gel solution on a substrate. A drying step of drying the precursor layer at a first temperature in the range of 120 ° C. to 250 ° C., and the precursor layer higher than the first temperature and in the range of 150 ° C. to 300 ° C. A stamping process in which the precursor layer is stamped while being heated to the second temperature, and the precursor layer is subjected to a heat treatment at a third temperature higher than the second temperature. And a ferroelectric material layer forming step of forming a ferroelectric material layer from the body layer in this order. [Selection] Figure 1 |
| priorityDate | 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.