| abstract |
A material suitable for semiconductor use such as a transistor and a diode is provided. An oxide semiconductor material containing zirconium can be easily crystallized, and an oxide semiconductor film having a crystal structure can be formed immediately after film formation. Therefore, the heat treatment after the formation of the oxide semiconductor film can be omitted, which is a process suitable for mass production. Specifically, an oxide semiconductor material containing at least indium and zinc contains zirconium which is one of group 4 elements. An oxide semiconductor material film (InZrZnO X film) in which zirconium is included in an oxide semiconductor material containing at least indium and zinc is provided. [Selection] Figure 2 |