http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013084715-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb2e55da27b235254850afe80e06cc4 |
| publicationDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013084715-A |
| titleOfInvention | Nonvolatile semiconductor memory device and manufacturing method thereof |
| abstract | An object of the present invention is to reduce the burden caused by a thermal process and improve memory cell characteristics. According to the method of manufacturing a nonvolatile semiconductor memory device according to the present embodiment, a conductive film to be a control gate CG is formed on a substrate. A hole 40 penetrating from the upper surface to the lower surface of the conductive film is formed. A block insulating film 150 is formed on the inner surface of the hole. A charge storage film 151 is formed on the block insulating film. A tunnel insulating film 152 is formed on the charge storage film. A semiconductor layer SP is formed on the tunnel insulating film. A film 153 including a material having a catalytic action of oxygen dissociation is formed on the semiconductor layer so as not to fill the holes. The interface between the tunnel insulating film and the semiconductor layer is oxidized through the film from the inside of the hole. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049905-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107615482-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107615482-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017524257-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017005105-A |
| priorityDate | 2011-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.