| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f28f75d7a9cfc6aace5eb97af7c4a00e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc0ed7128d2b2d63e637bef5b30b40c0 |
| publicationDate |
2013-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013077711-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
An object of the present invention is to improve wiring reliability by reducing variation in resistance at a connection portion between a through electrode and a wiring. A through hole for a through electrode is provided, and over-etching is performed on a wiring layer. By embedding copper in the hole, a through electrode made of copper is formed and connected to a wiring made of aluminum, and then the contact region G in which the through electrode and the wiring are connected by heat treatment is alloyed. Wiring reliability is improved by reducing resistance variation between the through electrode and the wiring. The present technology can be applied to a semiconductor device and its manufacture. [Selection] Figure 12 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450582-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102116060-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017150146-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483125-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108701614-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180110011-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021535613-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016072612-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017150146-A1 |
| priorityDate |
2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |