http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013063908-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0695196466d88055d3b68c071ecfc4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e27f7680ec9f79bcdc7dfecc45cc352 |
| publicationDate | 2013-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013063908-A |
| titleOfInvention | Method for producing group III metal nitride single crystal and template substrate |
| abstract | An object of the present invention is to provide a group III metal nitride single crystal with high productivity, relatively easy to manufacture, and to suppress meltback of a seed crystal film . An underlayer film of a group III metal nitride single crystal so as to cover a film formation surface and a processing recess on a substrate main body provided with a film formation surface and a processing recess. 4B and 5 are formed. The base film has a seed crystal film on the film formation surface and a polycrystalline film covering the side wall surface and the bottom surface of the processed recess. Next, a group III metal nitride single crystal 6 is grown on the base film by a flux method. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10947638-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017068933-A1 |
| priorityDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.