http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013060632-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e565b6678873d9f256e8fec9ada071ee |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 |
| filingDate | 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52fbe9c85b81ec056c64ecafb62a97ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8bcc65595568d61072014280b053863 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fad379dae68f7adaf91aa6afebe4e0d1 |
| publicationDate | 2013-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013060632-A |
| titleOfInvention | Method for producing fluorine-doped tin oxide thin film using magnetron sputtering method with pure tin target material |
| abstract | Provided is a method for producing a fluorine-doped tin oxide thin film in which a pure tin target material uses a magnetron sputtering method. In a magnetron sputtering production process, carbon tetrafluoride (CF 4 ) and oxygen (O 2 ) are introduced in a magnetron sputtering production process using high-purity tin as a target material for magnetron sputtering. In carbon tetrafluoride (CF 4 ), plasma excited by a working gas separates fluoride (F) ions and fluoride (F) excited state atoms, and combines with the tin target material to fluorine dope on the substrate. By forming a tin thin film, the production cost can be reduced and the quality of the fluorine-doped tin oxide thin film can be improved. [Selection] Figure 1 |
| priorityDate | 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.