http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013055300-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2011-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06f5013f0582fba2b42929521aeddb6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74ae7a7ab2400490ba7efffed819242f |
| publicationDate | 2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013055300-A |
| titleOfInvention | Semiconductor device repair method |
| abstract | A method for repairing a semiconductor device capable of preventing a new short circuit from occurring after defect repair is provided. A defect detection step for detecting a defect, a transparent conductive film 8 located on the upper surface of the defect, a p-type gallium nitride (p-GaN) layer 5, an activation layer 4, and an n-type gallium nitride (n-GaN) And a removal processing step of removing the layer 3 from above. In the removal processing step, the transparent conductive film is formed such that the drooping length L of the residue R of the transparent conductive film 8 is shorter than the total film thickness H of the p-type gallium nitride (p-GaN) layer 5 and the activation layer 4. 8 is removed. [Selection] Figure 1 |
| priorityDate | 2011-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.