| abstract |
An object of the present invention is to produce a high-quality, high-electron-concentration n-type semiconductor crystal in a flux method. At least a group III element is melted using a flux to form a solution, a gas containing nitrogen is supplied to the solution, and a semiconductor crystal made of a group III nitride compound semiconductor is formed on the seed crystal from the solution. This is a method for producing a group III nitride compound semiconductor by a growing flux method. Carbon and germanium are dissolved in a solution, and germanium is taken into the semiconductor crystal as a donor to obtain an n-type semiconductor crystal. The molar ratio of germanium to gallium was 0.05 mol% to 0.5 mol%, and the molar ratio of carbon to sodium was 0.1 mol% to 3.0 mol%. [Selection] Figure 3 |