http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013046050-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate | 2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38e3b8cf9775b632e53cb7ce04477e68 |
publicationDate | 2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2013046050-A |
titleOfInvention | Light emitting device and light emitting device package |
abstract | A light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells that are electrically connected with improved process safety are provided. The light emitting device includes a support substrate, a first conductivity type first semiconductor layer 11 disposed on the support substrate, a first active layer 12 below the first semiconductor layer, and the first active layer. A first light emitting structure 10 having a second conductive type second semiconductor layer 13 under the layer, a first metal layer under the first light emitting structure, and a first metal layer disposed on the support substrate. A second light emitting structure having a conductive third semiconductor layer, a second active layer under the third semiconductor layer, a second conductive type fourth semiconductor layer under the second active layer, and the second light emitting structure. A second metal layer under the light emitting structure; and a contact portion in contact with a side surface of the first semiconductor layer and electrically connected to the second metal layer. [Selection] Figure 2 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019050296-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013168547-A |
priorityDate | 2011-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.