http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013038149-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
filingDate 2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63376a30af6b08bf134ff100cf29920c
publicationDate 2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013038149-A
titleOfInvention Silicon carbide semiconductor device
abstract A silicon carbide semiconductor device having a low on-resistance, capable of high-speed operation, having normally-off characteristics, and configured using a single substrate is provided. First, second, fourth, and fifth impurity regions 11, 12, 21, and 22 have a first conductivity type, and a third impurity region 13 has a second conductivity type. The first to third impurity regions 11 to 13 reach the first conductivity type first layer 34. The fourth and fifth impurity regions 21 and 22 are provided on the second layer 35. The first to fifth electrodes S1, D1, G1, S2, and D2 are provided on the first to fifth impurity regions, respectively. Between the first and fifth electrodes S1, D2 and between the third and fourth electrodes G1, S2 are electrically connected. A sixth electrode G2 is provided on the gate insulating film I2 covering between the fourth and fifth impurity regions 21 and 22. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014229823-A
priorityDate 2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004247496-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
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Total number of triples: 22.