| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54df37e208afe98338cee1a99b02d9aa |
| publicationDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013038124-A |
| titleOfInvention |
Semiconductor memory device and manufacturing method thereof |
| abstract |
A semiconductor memory device capable of improving reliability and a method of manufacturing the same are provided. A semiconductor memory device according to an embodiment includes a stacked body having a plurality of stacked gate electrodes and an insulating film provided between the gate electrodes, and penetrates the stacked body. A semiconductor pillar; a charge storage layer provided between the semiconductor pillar and the gate electrode through a gap; and a block insulating layer provided between the charge storage layer and the gate electrode. A plurality of memory cells are provided in the stacking direction. A support portion that maintains a distance between the charge storage layer and the semiconductor pillar is provided for each of the plurality of memory cells. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016135849-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287288-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183507-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017045825-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367000-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018537842-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179465-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868041-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016225614-A |
| priorityDate |
2011-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |