http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013021353-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16d7f610531dbae77bcb2e95d91a071b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0738 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| filingDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a13a1de45614597f6917d78df6eb7d46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca8268b964d031d1b217e40504977a67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ed7e67925d5ded1b3604869033b17f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d51d7ec652a3024fe0387a2ede6d94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79d03728e017ad4f5a0f75619d892a9a |
| publicationDate | 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013021353-A |
| titleOfInvention | System and method for realizing interaction between a laser shaped as a line beam and a film deposited on a substrate |
| abstract | A molding line that positions a film against interaction with a laser shaped as a line beam and crystallizes the film, for example, to melt an amorphous silicon film to produce a thin film transistor (TFT), for example. Systems and methods for controlling beam parameters are provided. A laser crystallization apparatus and method for selectively melting a film, such as amorphous silicon, deposited on a substrate. The apparatus can include an optical system for generating stretched laser pulses that are used in melting the film. In yet another aspect of embodiments of the present invention, systems and methods for stretching laser pulses are provided. In another aspect, a system is provided for maintaining the divergence of a pulsed laser beam (stretched or unstretched) at a location along the beam path within a predetermined range. [Selection] Figure 6 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7328059-B2 |
| priorityDate | 2005-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.