http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013016866-A

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filingDate 2012-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2e7f1c48263e8c09fe91cffc7f91c32
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publicationDate 2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013016866-A
titleOfInvention Laminated structure having oxide semiconductor thin film layer, method for producing laminated structure, thin film transistor, and display device
abstract The present invention provides a high quality oxide thin film by controlling the direction of crystal arrangement of the oxide thin film. A layered structure including an oxide layer and an insulating layer serving as a channel layer of a thin film transistor, wherein a material constituting the oxide layer substantially includes a bixbite structure of indium oxide, and the oxide layer The laminated structure is characterized in that the carrier concentration is 10 18 / cm 3 or less, the average crystal grain size is 1 μm or more, and the crystals of the oxide layer are arranged in a columnar shape on the surface of the insulating layer. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014136916-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543447-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019192927-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6036984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2014136916-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015142047-A
priorityDate 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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