| abstract |
A manufacturing method for obtaining a semiconductor ceramic composition in which the Curie temperature can be shifted in the positive direction without using Pb and the resistivity at room temperature is greatly reduced, and without performing a complicated heat treatment. Also, a method for producing a semiconductor porcelain composition capable of imparting uniform characteristics even to a material having a relatively large thickness even inside the material. The composition formula is represented as [(Bi 0.5 Na 0.5 ) x (Ba 1-y R y ) 1-x ] TiO 3 (where R is at least one of La, Dy, Eu, Gd, and Y), In the method for producing a semiconductor ceramic composition in which x and y satisfy 0 <x ≦ 0.14 and 0.002 <y ≦ 0.02, the sintering is performed in an inert gas atmosphere having an oxygen concentration of 1% or less, whereby resistance at room temperature is achieved. The ratio is greatly reduced and uniform properties are imparted to the inside of the material. [Selection] Figure 1 |