http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013009314-A

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filingDate 2012-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2013009314-A
titleOfInvention Semiconductor device
abstract A semiconductor device with reduced manufacturing cost and improved yield and a semiconductor device with reduced power consumption are provided. A first transistor and a second transistor, a first transistor group, and a second transistor group are provided. The first transistor group includes terminals of a third transistor, a fourth transistor, and a fourth transistor. The second transistor group includes fifth to eighth transistors and four terminals. The first transistor, the third transistor, the sixth transistor, and the eighth transistor are An n-channel transistor is used, and the second transistor, the fourth transistor, the fifth transistor, and the seventh transistor are semiconductor devices using p-channel transistors. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7286376-B2
priorityDate 2011-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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