http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013008924-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate | 2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b1f7bd3d493b0ccbdff616800fb3be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8f0c17a7268adcca741216cffaccca2 |
| publicationDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013008924-A |
| titleOfInvention | Semiconductor light emitting device manufacturing method and semiconductor light emitting device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device excellent in corrosion resistance while improving light emission efficiency and a method for manufacturing the same. A semiconductor laminated structure having a light emitting layer that emits light by supplying electric power is formed, and a reflective film that reflects at least a part of light emitted from the light emitting layer is formed thereon. Are formed. Then, by oxidizing the exposed surfaces of the electrodes 21 and 22, an oxide film 2bx is formed on at least the surface of the reflective film 2b. Thereby, the corrosion resistance of the reflective film 2b can be improved. [Selection] Figure 3 |
| priorityDate | 2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.