http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013008862-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 |
| filingDate | 2011-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dec48ac971618e9e3c17b0fd615a1e4 |
| publicationDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013008862-A |
| titleOfInvention | Optical semiconductor device |
| abstract | An optical semiconductor device capable of achieving both multi-layer stacking of quantum dot layers and a longer wave length of a PL wavelength is provided. A columnar quantum dot layer is formed on a semiconductor substrate and stacked via a barrier layer so that a plurality of quantum dot layers having compressive strain are electronically coupled to each other. Each barrier layer formed between the plurality of quantum dot layers is formed on the first barrier layer having tensile strain, the second barrier layer having tensile strain, and on the second barrier layer. A third barrier layer formed and having tensile strain. The tensile strain amount of the first barrier layer and the third barrier layer is smaller than the tensile strain amount of the second barrier layer. [Selection] Figure 4 |
| priorityDate | 2011-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.