| abstract |
A method of manufacturing a nitride semiconductor crystal having a low impurity concentration such as oxygen at a high growth rate is provided. Zinc halide is used as a mineralizing agent in growing a nitride semiconductor crystal 2 in the presence of a supercritical and / or subcritical solvent 3 in a reaction vessel. A compound containing a halogen atom, an alkali metal, an alkaline earth metal, or a rare earth metal, which is a compound other than zinc halide, may be used in combination. The reaction vessel is a capsule made of a platinum group or an alloy containing a platinum group. [Selection] Figure 1 |