http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013003206-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B37-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B37-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08B31-08 |
| filingDate | 2011-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631 |
| publicationDate | 2013-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013003206-A |
| titleOfInvention | Pattern forming method and resist composition |
| abstract | A resist composition containing a polysaccharide in which a hydroxy group is substituted with an acid labile group, an acid generator, and an organic solvent is applied onto a substrate, and the resist film is applied with high energy rays after heat treatment. A pattern forming method for obtaining a negative pattern in which an unexposed portion is dissolved by exposing to light and using an organic solvent developer after heat treatment so that the exposed portion is not dissolved. [Effect] A photoresist film containing a polysaccharide in which a hydroxy group is substituted with an acid labile group and an acid generator has a high solubility in unexposed areas in the image formation of positive / negative reversal in development with an organic solvent, and exposure. The solubility of the part is low and the dissolution contrast is high. By exposing using this photoresist film and performing organic solvent development, it becomes possible to form a fine hole pattern with high dimensional control and high sensitivity. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013028744-A |
| priorityDate | 2011-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 270.