http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013001970-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dca153f19868f747eeea612b047a9e7c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcdb80bc6abe50ec7273d49cb201d4aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f489fdb2bc87abb2e41ea13e092aeaa |
| publicationDate | 2013-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013001970-A |
| titleOfInvention | Deposition equipment |
| abstract | Disclosed is a film forming apparatus capable of reducing damage to a base layer during sputtering film formation by reducing a discharge voltage. SOLUTION: An AC power supply unit 50 that alternately supplies voltages to a pair of targets 21A and 21B is provided, and thermal electrons are emitted from a filament 41 in an AC dual cathode sputtering method. By supplying thermoelectrons to the region where the plasma is formed, the discharge voltage of the plasma is lowered, and damage to the underlying layer during sputtering film formation is reduced. [Selection] Figure 2 |
| priorityDate | 2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.