http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012525718-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012525718-A |
| titleOfInvention | Method for forming an in situ pre-GaN deposition layer in HVPE |
| abstract | Methods and apparatus are provided for preparing a substrate for forming an electronic device incorporating a III / V compound semiconductor. A precursor in which elemental halogen gas, hydrogen halide gas, or other halogen gas or halide gas is in contact with a liquid or solid group III metal and reacts with a nitrogen source to deposit a nitride buffer layer on the substrate. Form a substance. The buffer layer, which can be a transition layer, can incorporate multiple Group III metals and can be deposited in an amorphous or crystalline form. The amorphous layer can be partially or fully recrystallized by heat treatment. Instead of a layer, multiple separate nucleation sites can be formed, and their size, density, and distribution can be controlled. The nitrogen source can include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer layer or transition layer can also be varied by the depth according to the desired profile. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017526191-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015144181-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015156418-A |
| priorityDate | 2009-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.