| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2010-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012519381-A |
| titleOfInvention |
Tile substrates for deposition and epitaxial lift-off processes. |
| abstract |
Embodiments of the present invention generally relate to epitaxial lift-off (ELO) films and methods for making such films. Embodiments provide a method for growing multiple ELO films or stacks simultaneously and separately on a common support substrate having a number of epitaxial growth substrates or faces arranged in a tile. The ELO film is then removed from the epitaxial growth substrate by an etching step during the ELO process. A tiled growth substrate including an epitaxial growth substrate disposed on a support substrate can be reused to further grow the ELO film. In one embodiment, tiled growth substrate comprising two or more gallium arsenide growth substrate disposed apart on a supporting substrate is provided, the supporting substrate, about 5 × 10- 6 ℃ - 1 to about 9 × having a thermal expansion coefficient in a range of up to 1 - 10- 6 ℃. [Selection] Figure 1A |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150122699-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102213060-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016508676-A |
| priorityDate |
2009-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |