| abstract |
The present invention relates to a stripping composition and the use of such a stripping / cleaning composition in a method for cleaning an implanted photoresist, the composition comprising silicon, titanium, titanium nitride, tantalum, and tungsten. It can be adapted. A composition for removing a high dose ion implanted photoresist from the surface of a semiconductor device, comprising at least one solvent having a flash point above 65 ° C., at least one component providing nitronium ions, and Provided are compositions having at least one phosphonic acid corrosion inhibitor compound and the use of such compositions for removing high dose ion implanted photoresists from the surface of semiconductor devices. |