| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2012-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012517612-A |
| titleOfInvention |
Hard mask method for reverse tone image formation using polysilazane |
| abstract |
The present invention is a method for forming a reverse tone image on a device comprising: a) optionally forming a light-absorbing organic underlayer on a substrate; b) forming a photoresist coating on the underlayer. C) forming a photoresist pattern; d) forming a polysilazane coating on the photoresist pattern from a polysilazane coating solution, wherein the polysilazane coating is thicker than the photoresist pattern, wherein the polysilazane coating composition is E) etching the polysilazane coating to remove the polysilazane coating at least as high as the top of the photoresist so that a photoresist pattern appears; and f) a photoresist, as well as The present invention relates to a method comprising dry etching and removing an underlying layer under the photoresist to form an opening under the place where the photoresist pattern was present. The present invention further relates to a product of the above method and a microelectronic device manufactured using the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014157299-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9958779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015069173-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015046449-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015125387-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101780562-B1 |
| priorityDate |
2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |