| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| filingDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012514335-A |
| titleOfInvention |
Wavelength converter on both sides and method for producing light generating device using the same |
| abstract |
A method of forming a light converting element includes providing a semiconductor structure having a first photoluminescent element epitaxially grown with a second photoluminescent element. The first region is etched in the first photoluminescent element from the first side of the semiconductor structure, and the second region is etched in the second photoluminescent element from the second side of the semiconductor structure. Is done. In some embodiments, the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017513225-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876001-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016532295-A |
| priorityDate |
2008-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |