http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012512392-A

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filingDate 2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012512392-A
titleOfInvention Electronic sensor for nitric oxide
abstract A semiconductor device is disclosed that determines the concentration of NO in a fluid, such as exhaled breath, for example. The device (1) typically comprises a pair of electrodes (18) separated from one another to define a channel region (16) in the organic semiconductor layer (14), and a gate structure (10) for controlling the channel region And an acceptor layer (22) which at least partially overlaps the channel region, the acceptor layer being a porphine comprising a Group III to Group XII transition metal ion or lead (Pb) ion complexed with NO It has a phthalocyanine coordination complex. Such a semiconductor device can detect NO concentration in the ppb range.
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